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1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ

1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ

$ 1.84

Availability: 13 in stock
  • Packaging: SOJ
  • Output Type: CMOS
  • Return shipping will be paid by: Buyer
  • Minimum Operating Voltage: 4.5 V
  • Refund will be given as: Money back or replacement (buyer's choice)
  • Mounting Style: Surface Mount
  • Maximum Operating Voltage: 5.5 V
  • MPN: M5M44100CJ
  • All returns accepted: Returns Accepted
  • Condition: New
  • Brand: Mitsubishi
  • Item must be returned within: 30 Days
  • Memory Size: 4 Mbit
  • Type: DRAM

    Description

    1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
    The M5M44100CJ is a 4194304-word by 1-bit dynamic RAM, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.  The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application.
    SPECIFICATIONS
    Manufacturer: Mitsubishi
    Part Number: M5M44100CJ
    Power Dissipation (Typ.): 400 mW  (550 mW Max)
    Access time (MAX.): 60 ns
    R/W cycle time (MIN.): 110 ns
    Standard 26-pin SOJ
    Single 5V±10% supply (4.5V to 5.5V)
    Low stand-by power dissipation
    CMOS Input level: 550 µW (Max)
    Self refresh capability
    -Self refresh current:    120µA(Max)
    Extended refresh capability
    - Extended refresh current: 120µA(Max)
    Fast-page mode(2048-column random access), Read-modify-write, RAS-only refresh, CAS before RAS refresh, Hidden refresh capabilities.
    Early-write operation gives common I/O capability.
    1024 refresh cycles every 128ms (A0~A9)
    16-bit parallel test mode capability
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